Robert M. Radway (Graduate Student Member, IEEE) received the B.S. degree in electrical engineering and the M.Eng. degree in computer science from the Massachusetts Institute of Technology (MIT), Cambridge, MA, USA, in 2016 and 2017, respectively. He is currently pursuing the Ph.D. degree in electrical engineering with Stanford University, Stanford, CA, USA, under the guidance of Prof. Subhasish Mitra. During his M.Eng. degree, he was advised by Prof. Tomás Palacios and worked on wafer-bonded GaN HEMTs for improved thermal management. His current research interests include novel nanosystems, illusion systems, and new architectures enabled by monolithic 3-D integration and emerging devices (such as resistive RAM) and their applications at the edge.