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Postdoc Scholar

Shengman Li

Shengman Li received her B.S. (2015) and Ph.D. (2020) in Microelectronics and Solid-State Electronics from Huazhong University of Science and Technology, Wuhan, China. During her period of doctoral study, she worked on oxide semiconductor electronics, including nanometer-thin indium-tin-oxide semiconductor synthesis, nanofabrication of sub-20nm logic devices, test and design of radiofrequency and digital devices. Her presentation about 10-nm channel length indium-tin-oxide transistors on IEDM arouses researchers’ interest in oxide semiconductors in terms of BEOL compatible integration.

In 2022, she started a postdoctoral position at Stanford with Prof. Subhasish Mitra and Prof. Philip Wong. Her research focuses on high-performance CNFET with extreme CGP-scaling and oxide semiconductor-based memory.